JPH0436472B2 - - Google Patents

Info

Publication number
JPH0436472B2
JPH0436472B2 JP57000085A JP8582A JPH0436472B2 JP H0436472 B2 JPH0436472 B2 JP H0436472B2 JP 57000085 A JP57000085 A JP 57000085A JP 8582 A JP8582 A JP 8582A JP H0436472 B2 JPH0436472 B2 JP H0436472B2
Authority
JP
Japan
Prior art keywords
electrode
scintillator
detection element
light
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57000085A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58118163A (ja
Inventor
Jujiro Naruse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57000085A priority Critical patent/JPS58118163A/ja
Publication of JPS58118163A publication Critical patent/JPS58118163A/ja
Publication of JPH0436472B2 publication Critical patent/JPH0436472B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP57000085A 1982-01-05 1982-01-05 半導体放射線検出器 Granted JPS58118163A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57000085A JPS58118163A (ja) 1982-01-05 1982-01-05 半導体放射線検出器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57000085A JPS58118163A (ja) 1982-01-05 1982-01-05 半導体放射線検出器

Publications (2)

Publication Number Publication Date
JPS58118163A JPS58118163A (ja) 1983-07-14
JPH0436472B2 true JPH0436472B2 (en]) 1992-06-16

Family

ID=11464295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57000085A Granted JPS58118163A (ja) 1982-01-05 1982-01-05 半導体放射線検出器

Country Status (1)

Country Link
JP (1) JPS58118163A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61221689A (ja) * 1985-03-28 1986-10-02 Toshiba Corp 放射線検出装置
EP0239808B1 (en) * 1986-03-03 1991-02-27 Kabushiki Kaisha Toshiba Radiation detecting device

Also Published As

Publication number Publication date
JPS58118163A (ja) 1983-07-14

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